EVIDENCE FOR TWO DISTINCT DEFECTS CONTRIBUTING TO THE H4 DEEP-LEVEL TRANSIENT SPECTROSCOPY PEAK IN ELECTRON-IRRADIATED INP

Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level $H4$ produced in InP by electron irradiation. The characteristics of the $H4$ peak in Zn-doped InP has been studied as a function of pulse duration ${(t}_{p})$ before and after annealing. Our results show that at least two traps contribute to the $H4$ peak: one is a fast trap (labeled ${H4}_{F})$ and the other is a slow trap (labeled ${H4}_{S}).$ This is shown through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in the P sublattice.