Monolithically integrated InP-based pin-HEMT OEIC receiver with a bandwidth of 18 GHz

Summary form only given. High-speed photoreceivers are required for multigigabit/s transmission systems. For higher data rates, monolithically integrated photoreceivers offer the advantage of improved performance resulting from the reduction of parasitic capacitances and inductances. Pin-HEMT integration was chosen for this work because, at the present time, InP-based HEMTs have the highest cut-off frequencies and the lowest noise of all three terminal devices.