3-D Magnetic field sensor realized as a lateral magnetotransistor in cmos technology
1990
Abstract A study of a CMOS lateral magnetotransistor structure designed to sense all three components of a magnetic field is presented. The device has four collector pairs and uses a differential approach for magnetic field sensing. The results indicate a linear response. The spatial resolution of the device is 0.8 × 36 × 36 μm 3 .
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