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Dislocation Nucleation in MOCVD GaN Films on Stepped and Unstepped 4H-SiC Substrates
Dislocation Nucleation in MOCVD GaN Films on Stepped and Unstepped 4H-SiC Substrates
2007
M. E. Twigg
Nabil Bassim
Yoosuf Picard
Michael Mastro
Thomas J. Zega
Joshua D. Caldwell
Richard L. Henry
Charles R. Eddy
R.T. Holm
Philip G. Neudeck
Andrew J. Trunek
Anthony Powell
Keywords:
Crystallography
Metalorganic vapour phase epitaxy
Nucleation
Dislocation
Materials science
Optoelectronics
Correction
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