1.55 μm Er-doped GaN LED

Abstract Erbium (Er) doped semiconductors are of interest for light-emitting device applications operating at around 1.55 μm and for the potential integration with other semiconductor devices. However, the optical emission of Er 3+ ions in semiconductors has not been as efficient as in dielectric materials, particularly at room temperature. This may be because ionic bonds, which are characteristic of dielectrics, are better suited for forming the required Er 3+ energy levels than are covalent bonds, which are present in most III-V semiconductors. In this paper, we report 1.55 μm emission from an Er-doped GaN LED. We also discuss the effect of the measurement temperature on the emission spectrum as well as the effect of sample annealing on the emission spectrum.