Feasibility study of EUV patterned mask inspection for the 22nm node
2010
Extreme Ultra Violet Lithography (EUVL) is a major patterning solution candidate being
considered for the ITRS (International Technology Roadmap for Semiconductors)
advanced technology nodes commencing with the 22nm Half Pitch (HP) nodes.
Achieving defect free EUVL masks is a critical issue in the wafer manufacturing process
and thus the importance for mask inspection technology to be ready to support pilot line
development.
EUV mask inspection presents additional challenges with smaller line width, multilayer
defects and no pellicle to protect the mask. In addition, Line Edge Roughness on the
mask can limit the detection sensitivity. Configurable inspection illumination conditions
were considered to enhance the contrast of the mask image and improve the detection
sensitivity.
Here we present experimental results of evaluating the defects detecting capability on
several EUVL masks of different technology nodes. EUVL mask inspections were done
using Material's Aera3 TM DUV (193nm) reflected illumination optical inspection system
employing configurable inspection illumination conditions and magnifications.
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