A semiconductor device and method for producing

A semiconductor device having a pn junction, in particular a diode, a chip (1, 11) is formed with an edge portion consisting of a first layer (2, 12) of a first conductivity type and a second layer of the opposite conductivity type is constructed, with the second layer of at least two partial layers (3, 4, 13, 14) and the first partial layer (3, 13) has a first dopant concentration and the second partial layer (4, 14) has a second dopant concentration that is less than the first and that both partial layers (3, 4, 13, 14) a pn junction with the first layer (2, 12), characterized in that the pn junction of the first layer (2, 12) with the first partial layer (3, 13) (1, 11) and the pn junction between the first layer (2, 12) and the second partial layer (4, 14) in the edge region of the chip (1, 11) is formed exclusively in the interior of the chip and that the first layer (2, 12) highly doped is.