A method and apparatus for a semiconductor structure

The present invention discloses a method and apparatus for a semiconductor structure. A semiconductor structure may include a first and second devices, the first device having a first surface on which a first bonding layer and a second device having a first surface on which a second bonding layer. First bonding layer may be provided to the first device at least one conductive path of the electrical devices. Second bonding layer may be provided to a second device, at least one conductive path of the electrical device. The first device or the second device may include a MEMS electrical devices. The first and / or second bonding layer may be formed of getter material, the getter material may be provided outgassing absorption.