Hardmask composition making unsoluble polymers to developing solution, process of producing semiconductor devices using the same and semiconductor devices produced by the process

A resin composition for hard mask, a method for preparing a semiconductor device by using the composition, and a semiconductor device prepared by the method are provided to reduce the area of a photoresist pattern in intaglio in photolithographic process. A resin composition comprises a polymer containing an aromatic ring; and water or a mixture solvent comprising water and a water-soluble solvent as a solvent, wherein the aromatic ring is substituted with a water-soluble substituent. The composition is coated on a photoresist pattern to form a coating layer, the water-soluble substituent is removed by an acid catalyst supplied from the photoresist, thereby forming an insoluble region on the coating layer. Preferably the polymer is a homopolymer or copolymer of a novolac, hydroxy styrene-based, naphthol-based monomer, or their mixture.