Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD

Abstract A technique to grow low-dislocation-density AlGaN films is presented in this paper. The Al 0.17 Ga 0.83 N films using middle temperature (MT)-intermediate layer technique grown by metalorganic chemical vapor deposition on c -plane patterned sapphire were confirmed. The AlGaN films have been investigated by means of X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques. MT-intermediate layer technique can effectively reduce the dislocation density in the AlGaN films.