Total Ionizing Dose Responses of 22 nm FDSOI and 14 nm Bulk FinFET Charge-Trap Transistors

Total-ionizing-dose (TID) effects are investigated for 22 nm FDSOI and 14 nm bulk FinFET charge-trap memory transistors. Electron trapping in the gate dielectric establishes the programmed memory state for both SOI and bulk devices. To first order, ionizing radiation does not interact strongly with programming-induced charges in the gate dielectric for either device type. Hole trapping in the buried oxide dominates the TID response of the 22 nm FDSOI devices. 14 nm bulk devices with 2 fins and total effective fin widths of 150 nm are minimally affected by TID, but the subthreshold leakage of devices with 40 fins and total effective fin widths of 3 μm increases with increasing TID. When devices are programmed or reprogrammed after irradiation, significant increases in subthreshold slope are observed due to the generation of interface traps, border traps, and/or charge lateral non-uniformities.