High-speed high-power InAlAs/InGaAs/InP schottky photodiode

In this paper, a new high-power photodiode design based on Schottky-barrier contact to reduce thermal resistance, which limit the output microwave power of photodiodes with small active area, is presented. High-speed high-power InAlAs/InGaAs/InP Schottky photodiode has been fabricated and characterized.