Method of manufacturing semiconductor device having a porous low-k dieletric film

PURPOSE: A method for manufacturing a semiconductor device including a porous low dielectric layer is provided to reduce RC(Resistance Capacitance) delay by forming an insulation layer with low dielectric materials. CONSTITUTION: A substrate is loaded in a chamber. A dielectric layer is formed on the substrate(S1). The dielectric layer includes porogen. The dielectric layer is changed into a porous low dielectric layer by removing the porogen(S2). The substrate is unloaded from the chamber.