In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs (0 0 1)

Elastically strain-relaxed GaAs/In0.08Ga0.92As/GaAs heterostructures on GaAs (0 0 1) substrates were fabricated by the in-place bonding method. Pseudomorphic heterostructures were patterned and an underlying sacrificial AlAs layer was removed by selective etching. As the GaAs/InGaAs/GaAs structure is released from the substrate, elastic strain relaxation occurs in agreement with a force-balance model and the strain-relaxed structures are weakly bonded in place to the substrate. The bond between the strain-relaxed structure and the substrate was subsequently strengthened by annealing at 400 °C. The increase in the in-plane lattice parameter of these bonded GaAs/In0.08Ga0.92As/GaAs structures is 0.25–0.37%.