A New Interference Phenomenon in Sub-60nm Nitride-Based Flash Memory
2007
It is the first time to disclose that the similar interference from adjacent wordlines as found in floating-gate flash memory also exists in nitride-based flash memory. For sub-60nm nitride-based flash technologies, this interference effect cannot be ignored any more and should be well taken into consideration when defining the operation window of the memory products.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
1
References
5
Citations
NaN
KQI