A 2.5 V 256-level non-volatile analog storage device using EEPROM technology

This integrated circuit stores 256 analog voltage levels in high density, non-volatile memory with /spl sim/7.5m V resolution per level. By contrast, the multilevel storage capacity of a typical digital non-volatile memory is 4-level per cell. The integrated circuit operates over a voltage range of 2.5 V to 5.5 V. Previous analog storage implementation use a 5.0 V supply for /spl sim/12 mV equivalent resolution per level in a 128 k EEPROM.