Resistive random access memory device and method of manufacture

The invention discloses a resistive random access memory device and a manufacturing method thereof. The resistive random access memory device comprises a memory unit which is arranged between a bit line and a word line; the memory unit comprises a resistive unit and a schottky diode, wherein the schottky diode is connected with the resistive unit in series, wherein the schottky comprises a metal layer and a semiconductor layer which are contact mutually, and an interface between the metal layer and the semiconductor layer is of a nonplanar shape. The foot area on a chip can be reduced by the resistive random access memory device, and the great driving current can be provided, thus the memory intensity is improved.