The Carbon Co-implant with Spike RTA Solution for Boron Extension
2006
We present B junction extensions that are extremely abrupt and shallow manufactured by amorphization, C co-implantation and conventional rapid thermal annealing (RTA). Resulting junctions have abruptnesses of 2 nm/dec better than as-implanted profiles. The most shallow B junction that has been manufactured is 15 nm deep and Rs = 626 Ω/sq. Successful implementation of these junctions is straightforward for P-MOS 30 nm gate length devices.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
2
References
5
Citations
NaN
KQI