The Emergence of SiGe:C HBT Technology for RF Applications

In this paper we discuss the design of SiGe:C Heterojunction Bipolar Transistors for RF/IF applications on Motorola’s 0.35µm and 0.18µm BiCMOS platforms. High performance devices reaching fT/fMAX up to 120GHz/125GHz will be described. Additionally, high breakdown voltage devices for power amplifier applications are available having BVCEO > 5V.