Physically based Diagonal Treatment of the Self-Energy of Polar Optical Phonons: Performance Assessment of III-V Double-Gate Transistors

The nonequilibrium Green's function formalism is interesting for studying quantum electronic transport in nanostructures, including the treatment of polar optical (PO) phonon scattering, but the latter is usually described within a local approximation. This study uses an analytically derived rescaling technique to describe the interaction between carriers and PO phonons, including the effect of nonlocality. Simulation of double-gate transistors based on $I\phantom{\rule{0}{0ex}}I\phantom{\rule{0}{0ex}}I\ensuremath{-}V$ semiconductors shows the approach to be well-defined, very simple to implement, and effective. It seems that $I\phantom{\rule{0}{0ex}}I\phantom{\rule{0}{0ex}}I\ensuremath{-}V$ transistors will not significantly outperform Ge and Si devices, due in part to strong PO phonon scattering.