Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al2O3-Passivated High-k HfGdOx Dielectrics
2020
High-speed operation and low-power-consumption requirements have accelerated the development of thin-film transistors (TFTs) with exploration of gate dielectrics. In this work, the integration of a...
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