Magneto-luminescence study of carrier-induced excitonic to free-carrier transition of radiative recombination in a semiconductor quantum well

Abstract We have investigated the magnetic field dependence of the photoluminescence of a modulation-doped n-AlGaAs/GaAs single quantum well structure while changing the electron density in the well from zero to 7 × 10 11 cm −2 via gate electric fields. A clear transition from excitonic to free-carrier recombination was observed. At intermediate electron density, the existence of magneto-excitons is suggested.