Stress-induced performance enhancement in Si ultra-thin body FD-SOI MOSFETs: Impacts of scaling

A detailed study of the impact of channel stress on (100)/<110> Ultra-Thin Body and BOX (UT2B) Fully Depleted SOI (FD-SOI) MOSFET performance is presented. Stress-induced mobility enhancement diminishes with Si body thickness scaling below 5nm for electrons but not for holes. Performance enhancement is maintained with gate-length scaling.