Auger and electron-energy-loss spectroscopy study of interface formation in the Ti-Si system

We present a detailed study of interface formation in the titanium-silicon (Ti-Si) system under different temperature conditions. We make use of electronic-structure calculations in order to interpret the silicon Si ${L}_{2}$,3VV Auger line shape and the electron-energy-loss spectra. These techniques, together with low-energy electron diffraction and electron-microscopy observations and film-resistance data, allow us to discuss accurately the interface reactivity of the Ti-Si system with respect to temperature.