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Device simulation of heavily doped silicon electrical resistivity at extremely high temperatures
Device simulation of heavily doped silicon electrical resistivity at extremely high temperatures
2019
Yiyuan Zhao
Ray Hueting
Henk-Willem Veltkamp
Remco G.P. Sanders
Remco J. Wiegerink
Joost Conrad Lötters
Keywords:
Doping
Optoelectronics
Materials science
Electrical resistivity and conductivity
device simulation
Silicon
Correction
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