P.14: Distinguished Poster Paper: Separate Extraction Technique for Intrinsic Donor- and Acceptor-like Density-of-States over Full-Energy Range Sub-Bandgap in Amorphous Oxide Semiconductor Thin Film Transistors by Using One-Shot Monochromatic Photonic Capacitance-Voltage Characteristics

Hagyoul Bae,Sungwoo Jun,Hyunjun Choi,Chunhyung Jo,Yun Hyeok Kim,Jun Seok Hwang,Jaeyeop Ahn,Sung-Jin Choi,Dae Hwan Kim,Dong Myong Kim

P.14: Distinguished Poster Paper: Separate Extraction Technique for Intrinsic Donor- and Acceptor-like Density-of-States over Full-Energy Range Sub-Bandgap in Amorphous Oxide Semiconductor Thin Film Transistors by Using One-Shot Monochromatic Photonic Capacitance-Voltage Characteristics

2013

Hagyoul Bae
Sungwoo Jun
Hyunjun Choi
Chunhyung Jo
Yun Hyeok Kim
Jun Seok Hwang
Jaeyeop Ahn
Sung-Jin Choi
Dae Hwan Kim
Dong Myong Kim

We report an extraction technique based on experimental data for intrinsic donor- and acceptor-like subgap density-of-states (DOS) over the full-energy range (ECmonochromatic photonic capacitance-voltage (MPCV) characteristics in n-channel a-IGZO TFTs.

Keywords:

Thin-film transistor
Density of states
Indium gallium zinc oxide
Experimental data
Acceptor
Semiconductor
Analytical chemistry
Capacitance
Optoelectronics
Band gap
Materials science
Photonics
one shot
Monochromatic color

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