2D photonic structure with square symmetry in the GaAs/AlGaAs LED surface

In this paper, effect of 2D photonic pattern on the emission properties of the GaAs/AlGaAs based light emitting diode (LED) emitting at wavelength of 850 nm is demonstrated. For LED surface patterning, the interference lithography based on a double-exposure process using two-beam interference method was used. The prepared photonic structure pattern in the LED surface was analyzed by atomic force microscope. Such prepared LED with 2D patterned photonic structure shows considerable enhancement of light extraction efficiency and improved far-field radiation pattern.