Flash and related programming

The present invention provides a flash memory, comprising: a programming voltage generator, a plurality of memory cells, a current limiting unit with a multi-bit program control unit. Program voltage generator provides programming voltage to a fixed value when the detection period dynamically adjusted to provide the programming voltage at the time of programming cycle; a plurality of memory cells to receive the programming voltage and to generate a plurality of data lines and a plurality of multi-drain current data line voltage; a current limiting unit connected to the data lines, the current limiting means for receiving a reference current and a reference voltage to control the plurality of drain current; and a multi-bit program control unit connected to the data lines; wherein the multi-bit program control unit at the time of the detection period, the data line is detected with the lowest voltage value of the voltage data lines; and, at the time of the programming cycle, the data line voltage as a feedback voltage passed to the program voltage generator to generate a dynamic adjustment of the programming voltage.