Transient response after pulsed ionizing excitation of several buried oxides in fully-depleted SOI NMOS transistors

The purpose of this article is to study and compare the time-dependent response of different buried oxide (BOX) materials through the coupling effect in fully-depleted transistors. This can be achieved by separating the contribution of charge transport and trapping in the BOX from floating body effects in the silicon film. This new technique avoids any distortion of the BOX response induced by direct C(V) or threshold voltage measurements that require the application of high voltages. Results show a similar behavior of the studied BOX (SIMOX, UNIBOND), i.e. deep hole trapping and shallow electron traps.