A SiGe-on-SOI Mach-Zehnder modulator enabling easy edge coupling

A SiGe-on-SOI carrier-depletion Mach-Zehnder modulator is presented. Compared with Si modulators, it enables a dual-waveguide design using small SiGe waveguides for modulators and large Si waveguides for edge coupling thus eliminates advanced lithography for inverse tapers. DC and high speed test results are included.