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Investigations of core level states in epitaxial grown Si layers by electron energy loss spectrometry
Investigations of core level states in epitaxial grown Si layers by electron energy loss spectrometry
2018
Michael Stöger-Pollach
C. Hébert
E C Karl-Rückert
P. Schattschneider
B. Rau
S. Gall
H.W. Zandbergen
Keywords:
Epitaxy
Mass spectrometry
Electron
Analytical chemistry
Materials science
electron energy
core level
Correction
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