Temperature dependence of the damage induced by Cs ion implantation in zirconia

Single crystals of cubic zirconia were implanted at RT and 750 °C with increasing fluences of low energy Cs2+ ions. In situ RBS/C and TEM experiments were performed to determine the amount of damage, the nature of radiation defects and the possible occurrence of Cs precipitates as a function of the Cs fluence at both temperatures. Results indicate that the damage build-up and the nature of defects depend on the implantation temperature. TEM micrographs do not reveal the formation of any secondary phase for both implantation temperatures up to 3 at.%.