Combinatorial exploration of flux material for Bi4Ti3O12 single crystal film growth

Abstract The combinatorial approach to materials synthesis was employed for the quick screening of a flux material for liquid phase-mediated epitaxy of Bi 4 Ti 3 O 12 single crystal film. A series of ternary flux libraries composed of two self-fluxes (Bi 2 O 3 and Bi 4 Ti 3 O 12 ) and an impurity flux (VO x , WO x , CuO x , BiPO x , BaO, MoO x ) were fabricated on the SrTiO 3 (0 0 1) substrates. Then, stoichiometric Bi 4 Ti 3 O 12 was grown on each one of these flux libraries at a temperature presumed to melt the flux. High-throughput characterization with the concurrent X-ray diffraction (XRD) method resulted in the discovery of a novel flux material, CuO, containing Bi 2 O 3 , for Bi 4 Ti 3 O 12 single crystal film.