Crystal growth of ZnSe by PVT using a semi-open ampule

Bulk crystal growth of ZnSe from the vapor phase was conducted. A high reproducibility of the growth rate was obtained using a semi-open ampule into which Ar gas was introduced. The dependence of the growth rate on the growth temperature, measured by in situ growth rate monitoring, indicated that the growth rate was determined by diffusion of component gas in Ar gas with a constant non-stoichiometry.