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Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility
Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility
2021
Yuto Ando
Manato Deki
Hirotaka Watanabe
Noriyuki Taoka
Atsushi Tanaka
Shugo Nitta
Yoshio Honda
Hisashi Yamada
Mitsuaki Shimizu
Tohru Nakamura
Hiroshi Amano
Keywords:
Communication channel
Process (computing)
Electrode
Optoelectronics
Interface (computing)
Materials science
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