Towards the development of an InSb-based Neutron-Resistant Hall Sensor

We describe a study concerning two irradiation series of InSb thin films in the form of Hall structures, using the natural neutron spectrum of a thermal-type fission reactor. We used mono- and polycrystalline InSb thin films with various levels of donor doping. The range of electron concentration values of the samples (from 1016 to 1018 cm-3) allowed us to study the impact of predominant thermal neutrons on various InSb structures. Pre-irradiation long-term annealing of the samples at high temperatures ensured the thermal stabilization of the electrical parameters and made it possible to assess only defects introduced by neutrons in post-irradiation heat treatments, without the influence of post-evaporation defects. Neutron fluences of 8.7×1017 cm-2 and 1.2×1018 cm-2 were applied sequentially, and the total fluence was above 2×1018 cm-2. Annealing at high temperatures was performed after each irradiation process to estimate the quantity of donors created and to remove defects arising in the InSb structure. The results demonstrate the possibility of application of the InSb thin film in Neutron-Resistant Hall Sensor (NRHS) for modern technological settings: fusion and fission reactors, particle accelerators, cosmic and other scientific research.