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An experimental recovery of GaAs and GaN PHEMT linear equivalent circuits and noise models
An experimental recovery of GaAs and GaN PHEMT linear equivalent circuits and noise models
2010
Krutov
Rebrov
Keywords:
Noise (radio)
High-electron-mobility transistor
Gallium nitride
Gallium arsenide
molecular beam epitaxial growth
Optoelectronics
Facsimile
Equivalent circuit
Materials science
Correction
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