Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride

Abstract The effect of annealing a 75nm-thick layer of indium gallium arsenide nitride (InGaAsN) in 1.0×10 −6  Torr of nitrogen trifluoride (NF 3 ) has been studied by photoluminescence spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy, and hydrogen adsorption infrared spectroscopy. A red shift of 25 nm in the peak was observed following heating in NF 3 at 530 °C. The compressive strain of the InGaAsN was reduced under annealing in NF 3 ambient, while it increased under annealing in AsH 3 ambient. It is concluded that N atoms diffuse into the alloy during the NF 3 exposure at 530 °C and increase the nitrogen concentration from about 1.2–1.7%.