Electrical characteristics of ultrathin Pt/Y/sub 2/O/sub 3//Si capacitor with rapid post-metallisation annealing

After rapid post-metallisation annealing (PMA) in forming gas at 425°C for 30 s, the Pt/Y2O3/Si capacitor shows a sharp capacitance-voltage swing and an increase of accumulation capacitance, and a decrease of the leakage current compared to the sample without PMA. A low oxide charge density of ∼7.7×1010 cm−2, and a minimum interface state density of ∼3.6×1010 cm−2 eV−1 were obtained at the Y2O3/Si interface with PMA.