The optoelectronic semiconductor chip

2013 
There is provided an optoelectronic semiconductor chip (100). The semiconductor chip (100) comprises a semiconductor layer sequence (1) having a bottom (10) and a bottom (10) opposite the upper side (14). seen from the bottom (10), the semiconductor layer sequence (1) a first layer (11) of a first conductivity type, an active layer (12) for generating electromagnetic radiation and a second layer (13) of a second conductivity type in this order on. The semiconductor chip (100) comprises on the underside (10) mounted lower contact element (2) and on the top (14) mounted upper contact element (3) for impressing current into the semiconductor layer sequence (1). On the bottom (10) is attached to a power distribution element (43), which distributes power along the bottom (10) in operation and from which a plurality of vias (41, 42) through the first layer (11) and through the active layer (12) in the semiconductor layer sequence (1). In operation, on the upper contact element (3) in the semiconductor layer sequence (1) impressed current at least partially over first of the vias (41) to the bottom (10) is guided, is distributed there by means of the current distribution element (43) on second of the vias (42) guided toward the upper side (14) and back into the semiconductor layer sequence (1) was injected.
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