Systematic studies of low dimensional effects depending on crystallographic overgrowth

Abstract The influence of epitaxial overgrowth on the optical properties of dry- etched InGaAs/InP wires is studied with respect to crystallographic orientation of the wires. Wires oriented in [011]- direction display good surface morphology and exhibit a drastic improvement of the quantum efficiency compared to open wires. The photoluminescence of the wires is strongly polarized parallel to the wire. Photoexcitation spectroscopy in the region of the barrier absorption reveals the strong influence of the carrier capture from the barrier on the quantum efficiency of the wires.