One-step chemical method for grafting organic film onto surface of semiconductor substrate

The invention provides a one-step chemical method for grafting an organic film onto the surface of a semiconductor substrate. The method comprises the following steps that a chemical plating solution is prepared; and the semiconductor substrate is placed in the chemical plating solution and kept standing at 0-30 DEG C to complete grafting of the organic film onto the surface of the semiconductor substrate. The method has the following advantages that 1) under the effect of F-, the uniform thick organic film can be prepared on the semiconductor substrate needless of additional equipment or temperature condition; and 2) the steps are simple, operation is easy, the cost is lower, and the method is suitable for the semiconductor field and industrial production.