A comparison of NF3 and NH3 as the nitrogen sources for AIN crystal growth by metalorganic chemical vapor deposition

Abstract Deposition of AIN by metalorganic chemical vapor deposition (MOCVD) with NF 3 and NH 3 as the nitrogen source was conducted at low temperatures (below 500°C). The resultant films were examined by scanning electron microscopy, X-ray diffraction, Auger electron spectroscopy (AES), and secondary ion mass spectrometry (SIMS). Rough, polycrystalline films were produced with NF 3 as the nitrogen source while smooth, featureless films were obtained with NH 3 . The X-ray diffraction pattern for films produced with NH 3 had a single peak while that for films produced with NF 3 had multiple peaks. AES and SIMS results revealed more impurities in films produced with NF 3 than those produced with NH 3 . The films produced with NF 3 contained high concentrations of fluorine, oxygen, and carbon. Even though NF 3 does not form an adduct with trimethylaluminum at room temperature, its deficiencies make it a poorer nitrogen source than NH 3 for low temperature MOCVD.