Laser-Induced Etching Of Insulators Using A DC Glow Discharge In Silane

We report a new method of laser-controlled etching in which the radiation from a pulsed-ultraviolet excimer laser is used to etch inorganic insulators exposed to plasma species that have been produced in a glow discharge sustained in silane. The maximum etch rate achieved was 50 nm/min for thin-film silicon dioxide.