Preparation and properties of the composite material silicon/polypyrrole–copper for electronic devices applications

Abstract The paper presents the results of the elaboration of new composites materials (Si/PPy–Cu) by incorporation of copper in polypyrrole films. Polymer films have been deposited on silicon electrode surfaces by electrochemical oxidation of the monomer in an organic solution. The incorporation of copper particles in the polymer film has first been conducted by the immersion of the modified electrode in a copper solution, thereafter; it has been reduced electrochemically in an aqueous solution to disperse metallic particles in the polymer film. The results obtained from cyclic voltammetry and impedance spectroscopy of the films before and after copper incorporation show differences in the electrochemical behavior of the modified films which suggest that Cu particles have been incorporated in the polymer. This has also been confirmed by the electrical resistivity, XRD, SEM and EDX measurements. For a possible application, current–voltage characteristics of the heterostructure devices (Si/PPy–Cu) have indicated a diode behavior similar of power semiconductor diodes.