Method for manufacturing graphene

The invention discloses a method for manufacturing graphene. The method includes steps of (a), cleaning a silicon carbide substrate; (b), etching the cleaned silicon carbide substrate by the aid of an inductively-coupled enhanced dual frequency capacitively coupled plasma source; (c), cooling the silicon carbide substrate after the silicon carbide substrate is etched, taking out the silicon substrate, and annealing the silicon carbide substrate at a low temperature to obtain the graphene with the silicon carbide substrate. The novel method for manufacturing the graphene has the advantages that properties that fluorine plasmas can remove silicon atoms on the surface of silicon carbide and generate volatile reactive substances are utilized for manufacturing a graphene material, the manufactured graphene material is free of stripping, the wide band-gap semiconductor silicon carbide which is widely applied to the electronics is used as the insulating substrate, and the method is completely compatible with current semiconductor processes.