Electrical properties of sol-gel deposited PbTiO/sub 3/ films on silicon substrates

Ferroelectric PbTiO/sub 3/ thin films were prepared by the sol-gel method from a precursor solution using lead acetate and titanium n-butoxide as raw materials and 2-methoxiethanol as solvent. The thin films were obtained by multistep spin coating onto p-type (111) Si substrates, pyrolysed at about 400/spl deg/C and crystallised using Conventional Thermal Annealing (CTA) at temperatures between 550/spl deg/C and 700/spl deg/C for 30 min. Electrical characterisation of Al-PbTiO/sub 3/-Si structures was performed by measuring capacitance-voltage and current-voltage characteristics. Due to the ferroelectric properties of the thin films the C-V plots show a clear hysteresis loop with a memory window of about 4 V. The I-V plots show a linear dependence of I vs. V for temperatures lower than 650/spl deg/C and a non-linear (diodelike) dependence for higher temperatures.