Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation
2014
The effect of the parameters (energy, dose) of the irradiation of silicon-on-sapphire (SOS) structures with ions Si+ ions on the quality of the silicon-film crystal structure after solid-phase epitaxial recrystallization and annealing is studied. It is shown that the most efficient mechanism of crystal-structure recovery is recrystallization from the silicon surface layer which is a seed.
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