Generation method of wafer

PROBLEM TO BE SOLVED: To provide a generation method of a wafer, capable of effectively generating the wafer from an ingot.SOLUTION: A generation method of a wafer comprising: a step of positioning a light condensing point of a laser beam of a wavelength having transmissivity to a hexagonal single crystal ingot 11 to a depth D1 corresponding to a thickness of the wafer generated from a surface 11a, and radiating the laser beam to the surface by relatively moving the light condensing point and the ingot, and forming a separation start point by forming a modified layer 23 parallel to the surface and a crack 25; and a step of generating the wafer by peeling a plate-like material corresponding to the thickness of the wafer from the separation start point from the ingot. The step of forming the separation start point includes: a step of forming a liner modified later in a direction crossing to a direction so that a c-axis is inclined by an off-angle to a perpendicular line of the surface and the off-angle is formed between the surface and a c surface by relatively moving the light condensing point of laser beam; and a step of indexing a predetermined amount by relatively moving the light condensing point in the direction so that the off angle is formed.SELECTED DRAWING: Figure 6