Realization in Clean Room and Electrical Characterization of P-Type Thin Film Transistor

This technological work is intended to DESS students (bac+5 level) in the frame of a project included in their cursus. The main goal is to apply the microelectronics technology knowledge already got after one week spent to fabricate a monocrystalline MOS structure in the cleanroom of the Centre Commun de Microelectronique de l’Ouest (CCMO). After this preparing phase, the students improve their technological know-how and skills by fabricating thin film transistor (TFT) with new process steps such as undoped or in-situ doped polysilicon deposition and reactive ion etching. The total duration of this project is about 80 hours, a major part occuring in the cleanroom of CCMO.